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What is Aestimo 1D?

Aestimo 1D is a self-consistent Schrödinger-Poisson solver written for simulating basic physical phenomena of 1-dimensional (1-D) semiconductor heterostructures. Aestimo was started as a hobby by Prof. Sefer Bora Lisesivdin from Gazi University, Ankara, Turkey, at the beginning of 2012, and become an usable tool soon. Aestimo 1D is now used as a co-tool in an educational and scientific works.

Who can use it?

Aestimo 1D is aimed to be both educational and research tool. For educational purposes, it must be easy to understand. For research, it must have some point of computational correctness and sensitivity. Written in Python scripting language, broadly used by scientific community, combines easy access to external quality libraries and source code with speedy and accurate simulation, extensibility, and community technical support. The very basic experience with computer programming is needed (if at all) and very basic physics understanding to start manipulating existing examples or even to design new models.

Publications using Aestimo 1D

This list may not be complete. If you want that your related publication can be listed here, or need a correction, please send a copy (pdf-file or reprint) or at least the cite information to: Sefer Bora Lisesivdin

2022

  • Tang, J., Liu, G., Mao, B., Zhao, G. and Yang, J., 2022. Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer. physica status solidi (RRL)–Rapid Research Letters, 16(4), p.2100573.
  • Davidson, Z.C. and Rorison, J.M., 2022. Criteria for the Use of Approximations for Full Band Structures of Compound III–V Semiconductor Quantum Wells. physica status solidi (b), 259(4), p.2100531.
  • Yapparov, R., Lynsky, C., Chow, Y.C., Nakamura, S., Speck, J.S. and Marcinkevičius, S., 2022, March. Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination. In Gallium Nitride Materials and Devices XVII (Vol. 12001, pp. 14-20). SPIE.
  • Hierro, A., Castellano, E.M., Tamayo-Arriola, J., Gonzalo, A., Stanojević, L., Ulloa, J.M., Klymov, O., Yeste, J., Agouram, S., Muñoz, E. and Muñoz-Sanjose, V., 2022, March. Coupling of localized surface plasmons to intersubband transitions in CdO/GaAs. In Oxide-based Materials and Devices XIII (Vol. 12002, pp. 7-13). SPIE.

2021

  • Bibi, B., Farhadi, B. and Liu, A., 2021. A novel design of CTZS/Si tandem solar cell: a numerical approach. Journal of Computational Electronics, 20(5), pp.1769-1778.

2020

  • Donmez, O., Aydın, M., Ardalı, Ş., Yıldırım, S., Tıraş, E., Nutku, F., Çetinkaya, Ç., Çokduygulular, E., Puustinen, J., Hilska, J. and Guina, M., 2020. Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility. Semiconductor Science and Technology, 35(2), p.025009.
  • Yapparov, R., Lynsky, C., Nakamura, S., Speck, J.S. and Marcinkevičius, S., 2020. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination. Applied Physics Express, 13(12), p.122005.
  • Khan, A.D., Subhan, F.E., Khan, A.D., Khan, S.D., Ahmad, M.S., Rehan, M.S. and Noman, M., 2020. Optimization of efficient monolithic perovskite/silicon tandem solar cell. Optik, 208, p.164573.

2019

  • Bajo, M.M., Tamayo-Arriola, J., Le Biavan, N., Ulloa, J.M., Vennéguès, P., Lefebvre, D., Hugues, M., Chauveau, J.M. and Hierro, A., 2019, March. Intersubband absorption at normal incidence by m-plane ZnO/MgZnO quantum wells. In Oxide-based Materials and Devices X (Vol. 10919, p. 109192C). International Society for Optics and Photonics.
  • Meng, B., Tamayo-Arriola, J., Le Biavan, N., Bajo, M.M., Torres-Pardo, A., Hugues, M., Lefebvre, D., Hierro, A., Chauveau, J.M. and Faist, J., 2019. Observation of Intersubband Absorption in Zn O Coupled Quantum Wells. Physical Review Applied, 12(5), p.054007.
  • Hierro, A., Bajo, M.M., Ferraro, M., Tamayo-Arriola, J., Le Biavan, N., Hugues, M., Ulloa, J.M., Giudici, M., Chauveau, J.M. and Genevet, P., 2019. Optical Phase Transition in Semiconductor Quantum Metamaterials. Physical Review Letters, 123(11), p.117401.
  • Riesch, M. and Jirauschek, C., 2019, September. Open-Source Simulation Software for Quantum Cascade Lasers. In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). IEEE.

2018

  • Dühn, J., Tessarek, C., Schowalter, M., Coenen, T., Gerken, B., Müller-Caspari, K., Mehrtens, T., Heilmann, M., Christiansen, S., Rosenauer, A. and Gutowski, J., 2018. Spatially resolved luminescence properties of non-and semi-polar InGaN quantum wells on GaN microrods. Journal of Physics D: Applied Physics, 51(35), p.355102.
  • Hierro, A., Bajo, M.M., Tamayo-Arriola, J., Hugues, M., Ulloa, J.M., Le Biavan, N., Peretti, R., Julien, F., Faist, J. and Chauveau, J.M., 2018, February. Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells. In Oxide-based Materials and Devices IX (Vol. 10533, p. 105331K). International Society for Optics and Photonics.
  • Cetinkaya, Caglar, Erman Cokduygulular, Ferhat Nutku, Omer Donmez, Janne Puustinen, Joonas Hilska, Ayse Erol, and Mircea Guina. “Optical properties of n-and p-type modulation doped GaAsBi/AlGaAs quantum well structures.” Journal of Alloys and Compounds 739 (2018): 987-996.
  • Bajo, M.M., Tamayo-Arriola, J., Hugues, M., Ulloa, J.M., Le Biavan, N., Peretti, R., Julien, F.H., Faist, J., Chauveau, J.M. and Hierro, A., 2018. Multisubband plasmons in doped ZnO quantum wells. Physical Review Applied, 10(2), p.024005.
  • Bajo, M.M., Tamayo-Arriola, J., Le Biavan, N., Ulloa, J.M., Vennéguès, P., Lefebvre, D., Hugues, M., Chauveau, J.M. and Hierro, A., 2018. Breaking the Intersubband Selection Rules for Absorption with ZnO Quantum Wells: Light Polarization Sensitivity under Normal Incidence. Physical Review Applied, 10(3), p.034022.

2017

  • Erucar, T., Nutku, F., Donmez, O. and Erol, A., 2017, February. Electronic bandstructure of semiconductor dilute bismide structures. In AIP Conference Proceedings (Vol. 1815, No. 1, p. 050004). AIP Publishing LLC.

2014

  • Hebal, H. and Abid, H., 2014. Crystal orientation effects on electronic and optical properties of wurtzite ZnO/CdZnO quantum well lasers. Superlattices and Microstructures, 75, pp.866-878.